Materiale utilizate:
Placheta 1 Si l=234 um
Placheta 2 Ge
Placheta 3 Si l=350 um
Relatii de calcul ale rezistivitatii electrice :
( ( EMBED Equation.3 EMBED Equation.3 unde s=1.6
( ( EMBED Equation.3 EMBED Equation.3 unde l este lungimea de difuzie pentru
fiecare placheta
Determinarea experimentala a variatiei rezistivitatii electrice relative a unui monocristal de Ge cu temperatura 1>3s.
Determinarea latimii benzii interzise pentru un semiconductor din Ge
Relatia de calcul:
Wi= 1.725* EMBED Equation.3 *10-4 [eV]
Schema montajului:
S e m i c o n d u c t o r
T a b e l e d e d a t e s i r e z u l t a t e :
N r p r o b a T i p s e m i c o n d T i p c o n d u c t i e U [ m V ] I [ m A ] ( [ ( m ] C o n c e n t r a t i a d e i m p u r i t a t i 1 S i g o l u r i 0 . 5 1 0 0 . 7 2 * 1 0 - 3 2 * 1 0 2 0 3 S i g o l u r i 0 . 4 1 0 0 . 5 8 * 1 0 - 3 4 * 1 0 2 0
= E M B E D E q u a t i o n . 3 * E M B E D E q u a t i o n . 3 * l = E M B E D E q u a t i o n . 3 * E M B E D E q u a t i o n . 3 * 3 . 2 * 1 0 - 3 = 0 . 5 8 * 1 0 - 3 m
l ~ 2 s = 2 * 1 . 6 = 3 . 2 m m
N r . c r t . T e m p e r a t u r a U I ( K [ m V ] [ m A ] [ ( m ] 1 2 9 3 7 4 1 0 . 7 4 2 3 1 3 7 5 1 0 . 7 5 3 3 3 3 7 0 1 0 . 7 4 3 5 3 4 2 1 0 . 4 2 5 3 7 3 2 8 1 0 . 2 8
= E M B E D E q u a t i o n . 3 * 2 * * s = E M B E D E q u a t i o n . 3 * 2 * 3 . 1 4 * 1 . 6 * 1 0 - 3 = 0 . 4 2 m
W i = 1 . 7 2 5 * E M B E D E q u a t i o n . 3 * 1 0 - 4 = 1 . 7 2 5 * E M B E D E q u a t i o n . 3 * 1 0 - 4
W i = 1 . 7 2 5 * 0 . 1 0 6 = 0 . 1 8 2 e V
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